Menu

Mehdi SI MOUSSA

MONTREAL

En résumé

Mehdi SI MOUSSA was born in Algeria, in 1977. He received the State Engineering degree in electronics and Magister degree in microwave and communication from the Ecole Nationale Polytechnique (ENP) in Algiers, Algeria, in 1999 and 2001, respectively, and Ph.D. degree in applied sciences from the Université catholique de Louvain, Louvain-la-Neuve, Belgium, in 2006.
His doctoral research deals with the design of microwave distributed amplifiers and oscillators on Silicon-on-Insulator (SOI) CMOS technology. Since 2002, he is with the Microwave Laboratory (EMIC) at the Université catholique de Louvain (UCL), Belgium, as a research assistant. His research interests include simulation, design, and modeling of RF and microwave circuits in SOI CMOS technology, for wideband and high temperature applications. He is currently involved in the design of microwave LNAs in SOI CMOS technology for low power, high temperature applications.
In 2008, he joined Advantech AMT, in Montreal, Canada as RF designer, where he is working on Solid-State Power Amplifiers.

Mes compétences :
Art
Communication
Communication skills
Design
Good communication skills
Motivated
Organized
Technology

Entreprises

  • Advantech AMT - RF Designer

    2008 - 2008 - Design and development of RF hardware for terrestrial and satellite communication systems, operating from 30 MHz up to 31 GHz -Develop existing and new technical solutions through research, prototype and production

  • Université catholique de Louvain - Assistant de Recherche

    2002 - 2007 The SOI microwave activity started in 1991, in collaboration with the Microelectronics Laboratory, UCL. The research activity in microwave SOI integrated circuits has four main orientations:

    - RF design, optimization and characterization of non-conventional MOSFETs
    - Development of non-linear microwave models for nMOS and pMOS transistors
    - Synthesis of low noise amplifiers, oscillators, mixers
    - Development of accurate models for integrated transmission lines and inductances on various types of substrates

    RF design, optimization and characterization
    of non-conventional MOSFETs

    Current applications of microwave electronics are forcing the aggressive downscaling of conventional MOSFET's architectures. Higher cut off frequencies are obtained when the gate length of the devices are reduced to very small dimensions. 250 nm-technologies are now stable and cut-off frequencies of around 70 GHz are reached under only 1 V. Yet as the length of the devices is decreased to so small dimensions various parasitic short channel effects appear which tend to deteriorate the electrical performances of the devices. To postpone these effects to lower dimensions some 'exotic' structures have
    been studied: Dynamic Threshold MOSFET's (low power consumption), Graded Channels MOSFET's (extremely low output conductance), Dual Gate and Gate All Around MOSFET's (high transconductance). These structures are simulated (Silvaco, Medici), modeled and designed for RF optimization on SOI technology. This last step is achieved considering the complex environment in which the devices are embedded, and which is the source of many parasitic effects. They are processed in collaboration with different research groups and industries ( DICE, LETI, Peregrine, ST,…) and are
    RF-characterized within the Microwave Laboratory. Small signal circuit elements are extracted from S-parameters measurements.

Formations

  • Université Catholique De Louvain UCL-FSA (Louvain La Neuve)

    Louvain La Neuve 2002 - 2007 Hyperfréqueces

    Assistant de Recherche

  • Ecole Nationale Polytechnique D'Alger (Alger)

    Alger 1999 - 2001 Electronique - Communication & Microondes

  • Ecole Nationale Polytechnique

    1994 - 1999 Electronics

Réseau

Annuaire des membres :